CVE-2018-11982

Published Sep 20, 2018

Last updated 6 years ago

Overview

Description
In Snapdragon (Mobile, Wear) in version MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016, a double free of ASN1 heap memory used for EUTRA CAP container occurs during UTRAN to LTE Capability inquiry procedure.
Source
product-security@qualcomm.com
NVD status
Analyzed

Risk scores

CVSS 3.0

Type
Primary
Base score
8.8
Impact score
5.9
Exploitability score
2.8
Vector string
CVSS:3.0/AV:A/AC:L/PR:N/UI:N/S:U/C:H/I:H/A:H
Severity
HIGH

CVSS 2.0

Type
Primary
Base score
8.3
Impact score
10
Exploitability score
6.5
Vector string
AV:A/AC:L/Au:N/C:C/I:C/A:C

Weaknesses

nvd@nist.gov
CWE-415

Social media

Hype score
Not currently trending

Configurations